METHOD OF FORMING GATE OF SEMICONDUCTOR DEVICE FOR REDUCING NUMBER OF MASKS AND FABRICATION COST BY USING SIDEWALL SPACER TO FORM NANO GATE

摘要

PURPOSE: A method of forming a gate of a semiconductor device is provided to reduce the number of masks and the fabrication cost by using a sidewall spacer to form a nano gate. CONSTITUTION: A first buffer layer is formed on a silicon substrate including a predetermined structure. A second buffer is formed on the first buffer layer and a trench(26) is formed thereon. An insulating layer is formed on the second buffer layer and a sidewall(25) is formed by etching back the insulating layer. The first buffer layer is etched by using the sidewall as an etch mask. A poly is formed thereon and is planarized and a gate line is formed thereby. The first buffer layer is etched selectively.