METHOD OF PLANARIZING SEMICONDUCTOR DISPLAY DEVICE FOR IMPROVING STEP COVERAGE IN COATING PROCESS OF FLAT PANEL DISPLAY BY USING METAL CMP PROCESS INSTEAD OF ETCH-BACK PROCESS

摘要

PURPOSE: A method of planarizing a semiconductor display device is provided to improve a step coverage in a coating process of a flat panel display by using a metal CMP process instead of an etch-back process. CONSTITUTION: A diffusion barrier is formed on a semiconductor substrate. A patterning process is performed and the diffusion barrier remains only on a metal layer region. An insulating layer is formed on the semiconductor substrate including the diffusion barrier. A patterning process is performed and the insulating layer remains in the semiconductor substrate on which the diffusion barrier is not formed. A metal layer is formed on the semiconductor substrate including the insulating layer and the diffusion barrier. The metal layer is planarized by using the insulating layer as an ending point. A liquid crystal layer is formed on the semiconductor substrate.