| 摘要 |
<p>1,198,696. Semi-conductor devices. RCA CORPORATION. 9 Aug., 1967 [1 Dec., 1966], No. 36604/67. Heading H1K. A method of manufacturing semi-conductor devices includes the steps of providing on a semi-conductor surface an insulating coating 18 having a relatively thick portion and a thinner portion, simultaneously etching an opening 23 through the thinner portion and a recess 25 partly through the thicker portion, re-covering the exposed surface in the opening 23 with a new insulating coating 26, simultaneously etching through the insulation to expose the semiconductor surface beneath the recess 25 and below the thinner portion of the coating 18, and providing electrodes which contact the respective exposed surface portions through the apertures. The embodiment shown comprises a Si planar transistor having an emitter region 24 and a base region 20, 16 diffused into an epitaxial collector layer 14 on an N + substrate 12. The N + layer 12 may alternatively be diffused into the layer 14. The insulation 18 comprises silicon oxide or nitride, and in the former case is applied in two stages, firstly by oxidation of the Si surface and then by decomposition of SiH 4 and O 2 , the total thickness being 14,000 A. The emitter region 24 is diffused in after the initial etching stage which produces the aperture 23 and recesses 25, and the new insulation 26 is then formed by oxidation. The second etching stage exposes part of the base region beneath the recesses 25 and part of the emitter region 24, after which A1 electrodes are vapour deposited on. In this embodiment the aperture 27 is formed through the new insulation 26, but in a second form this aperture is formed through another part (46), Fig. 19 (not shown), of the thinner portion of the main insulating coating (40). The device in this second form of the invention is a multi-emitter transistor. Field effect transistors and integrated circuits are also referred to in the Specification.</p> |
