TRANSISTOR FABRICATION METHOD FOR CONTROLLING THRESHOLD VOLTAGE AND INCREASING RETENTION TIME USING SELECTIVE ION IMPLANTATION PROCESS

摘要

PURPOSE: A method of fabricating a transistor is provided to control a threshold voltage and increase a retention time by implanting selectively ions only into a channel region of a lower part of a gate. CONSTITUTION: A field oxide layer(220) is formed on a semiconductor substrate(200) to define an active region and a field region and a well implantation process and a field implantation process are performed. A gate is patterned and only a cell region is opened. Ions are implanted only into a channel region of a lower part of the gate by forming a tilt on the cell region and performing a bimode type ion implantation process. A source/drain is formed thereon.