| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to enhance integration degree of a PMOS by improving off leakage current due to short channel effect using a slit-shaped hole. CONSTITUTION: By etching selectively a semiconductor substrate(10) having an N-well, a slit-shaped hole is formed on a channel region of the substrate. A doped polysilicon layer of N+ conductive type is filled in the slit-shaped hole. A polysilicon pattern(34A) is formed in the hole by etching the doped polysilicon layer to expose the surface of the substrate.
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