| 发明名称 |
METHOD FOR MANUFACTURING FERROELECTRIC CAPACITOR CAPABLE OF IMPROVING ADHESION BETWEEN LOWER ELECTRODE AND FERROELECTRIC FILM USING ANNEALING |
| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric capacitor is provided to enhance adhesion between a lower electrode and a ferroelectric film by using annealing. CONSTITUTION: A lower electrode(51,53) of a ferroelectric capacitor is formed on a semiconductor substrate(50). A hillock(H) or a void is formed on the surface of the lower electrode by performing a first annealing process. A ferroelectric film(54) is formed on the lower electrode. A second annealing process is carried out. An upper electrode is then formed on the ferroelectric film.
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| 申请公布号 |
KR20050002989(A) |
申请公布日期 |
2005.01.10 |
| 申请号 |
KR20030043035 |
申请日期 |
2003.06.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HONG, SUK KYOUNG;JANG, IN WOO;LEE, KYE NAM;SEONG, JIN YONG |
| 分类号 |
H01L27/108;H01L21/00;H01L21/02;H01L21/3105;H01L21/314;H01L21/316;H01L21/768;H01L21/8242;H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
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