发明名称 HYBRID INTEGRATED CIRCUIT FOR IMPROVING HEAT DISSIPATION CAPABILITY AND ELECTROMAGNETIC FIELD SHIELDING CAPABILITY BY FIXING BOTTOM FACE OF SEMICONDUCTOR CHIP ON GROUND CONDUCTIVE LAYER WITHIN CAVITY TO REDUCE HEAT TRANSFER DISTANCE BETWEEN SEMICONDUCTOR CHIP AND MOTHER BOARD
摘要 PURPOSE: A hybrid integrated circuit is provided to improve heat dissipation capability and electromagnetic field shielding capability by fixing a bottom face of a semiconductor chip on a ground conductive layer within a cavity to reduce a heat transfer distance between the semiconductor chip and a mother board. CONSTITUTION: A first wiring substrate(11) includes a plurality of signal line layers(13) and a plurality of ground conductive layers(14). Each of the signal line layers and one ground conductive layer corresponding to the signal line layers are used for forming a micro-strip line. A cavity(12) is formed in the first wiring substrate to expose one of the ground conductive layers from a bottom of the cavity. A semiconductor chip(15) is installed in the cavity and includes a bottom surface fixed to the one of the ground conductive layers. A mounting component(18) is installed on an upper surface of the first wiring substrate except for an upper part of the cavity.
申请公布号 KR20050002659(A) 申请公布日期 2005.01.10
申请号 KR20040050350 申请日期 2004.06.30
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. 发明人 SASO, TORU
分类号 H05K9/00;H01L23/02;H01L23/04;H01L23/13;H01L23/14;H01L23/48;H01L23/552;H01L23/66;H01L25/00;H01L25/04;H01L25/16;H01L25/18;H05K1/00;H05K1/14;H05K1/18;H05K3/34 主分类号 H05K9/00
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