| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve process margin and yield by simplifying storage node contact plug forming process using SEG(Selective Epitaxial Growth). CONSTITUTION: An insulating layer(11) is formed on a substrate having a desired structure. A first and second conductive patterns(BL2,BL3) are formed on the insulating layer. The substrate is exposed by selectively etching the insulating layer between the conductive patterns. A conductive layer(16b) is grown on the exposed substrate by SEG. By selectively etching the conductive layer using a photoresist pattern as a mask, isolated storage node contact plugs are formed between the first and second conductive patterns.
|
