| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve gap-fill property by using a dual trench. CONSTITUTION: A pad oxide pattern(21) and a pad nitride pattern(22) are sequentially formed on a substrate(20). A first trench is formed in the substrate by using the pad nitride and oxide pattern. A sidewall oxide layer(24), a liner nitride layer(25) and an oxide spacer(26) are sequentially formed at both sidewalls of the first trench. A second trench(27) having a relatively deep depth and narrow width is then formed at the bottom of the first trench. The oxide spacer is removed by wet-etching. An insulating layer is then filled in the first and second trench.
|
