METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CAPABLE OF IMPROVING PLANARIZATION PROPERTY OF FLUIDITY INSULATING LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve planarization property of a fluidity insulating layer by rounding the fluidity insulating layer used as an interlayer dielectric. CONSTITUTION: Patterns having high pattern density and low pattern density are formed on a semiconductor substrate(20). A fluidity insulating layer(26) is formed on the resultant structure. By partially removing the fluidity insulating layer on the center portion of the high pattern density, the height of the etched fluidity insulating layer is same to the height of the fluidity insulating layer located on the low pattern density. Then, the fluidity insulating layer is planarized by CMP(Chemical Mechanical Polishing).