| 摘要 |
PURPOSE: A capacitor of a ferroelectric memory device and a manufacturing method thereof are provided to improve contact resistance between a storage node contact and a lower electrode by forming a conductive oxide layer on the storage node contact. CONSTITUTION: An interlayer dielectric(34) is formed on a semiconductor substrate having a junction region(33). A storage node contact is formed to connect the junction region through the interlayer dielectric, wherein the storage node contact has the stack structure of a recessed plug(35a), an oxide barrier layer(36a) and a conductive oxide layer(37) as a diffusion barrier in a storage node contact hole. A lower electrode(38) is formed on the storage node contact. A ferroelectric film(40) and an upper electrode(41) are sequentially formed on the lower electrode.
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