PHOTOMASK FOR FORMING CONTACT PATTERN TO IMPROVE PROFILE OF EDGE PART IN MAIN PATTERN

摘要

PURPOSE: A photomask for forming contact patterns is provided to correct proximity effect by unifying the light strength on both of the center and the edge part of the main pattern, and thus to improve the profile of the edge part of the main pattern. CONSTITUTION: The photomask for forming contact pattern comprises main patterns(540) to define light exposure area where transfer of pattern to a semiconductor substrate is occurred, and at least one auxiliary pattern(500), which is aligned on the extended center lines of the main patterns and has a width as much as the transfer of pattern to the semiconductor substrate is not occurred.