| 摘要 |
PURPOSE: A method for manufacturing a ferroelectric memory device is provided to prevent lifting and bubbling of a lower electrode by enhancing the adhesion between the lower electrodes. CONSTITUTION: An interlayer dielectric is formed on a semiconductor substrate(30). A storage node contact hole is formed by selectively etching the interlayer dielectric. A storage node contact(37A) is formed in the storage node contact hole. An adhesive layer is formed on the interlayer dielectric to open the storage node contact. An Ir film(39), an alumina film(40) and a Pt film(41) as lower electrode material are sequentially deposited on the adhesive layer. By patterning the lower electrode material and the adhesive layer, a lower electrode(200) and an adhesive pattern(38A) are formed.
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