| 摘要 |
PURPOSE: A method for forming a spacer of a semiconductor device is provided to improve the quality of a nitride spacer by using RPN(Remote Plasma Nitrification) processing before forming the nitride spacer. CONSTITUTION: A plurality of gates(11A,11B,11C) are formed on a semiconductor substrate(10). A buffer oxide layer(12), a nitride spacer(13) and an oxide spacer(14) are sequentially formed on the resultant structure. The oxide spacer is removed by using the nitride spacer as an etch barrier. Before the nitride spacer is formed, the surface of the buffer oxide layer is treated by remote plasma nitrification processing.
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