ФОТОПРИЕМНАЯ ЯЧЕЙКА

摘要

FIELD: microelectronics; production of integrated multicomponent photodetectors. ^ SUBSTANCE: proposed photodetector cell characterized in process compatibility with standard CMOS technology has at least one p-n junction in substrate of first polarity of conductivity buried at certain depth from surface coated with silicon dioxide layer. At least part of surface above p-n junctions is coated with polycrystalline silicon layer whose thickness is great enough to suppress ultraviolet and blue parts of incident rays. ^ EFFECT: enlarged dynamic range. ^ 4 cl, 2 dwg