CAPACITOR WITH ALUMINUM NITRIDE LAYER AS OXIDATION BARRIER LAYER TO PREVENT OXIDATION OF LOWER ELECTRODE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A capacitor and a method for manufacturing the same are provided to enhance capacitance and to restrain oxidation of a lower electrode by forming an aluminum nitride layer as an oxidation barrier layer between the lower electrode and a dielectric film. CONSTITUTION: A lower electrode(35) is formed on a semiconductor substrate(31). An oxidation barrier layer(36) is formed on the lower electrode, wherein the oxidation barrier layer is composed of an aluminum nitride layer. An alumina(37) as a dielectric film is formed on the oxidation barrier layer. Annealing is then performed. Then, an upper electrode(38) is formed on the annealed alumina.