METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE CAPABLE OF PREVENTING METALIZATION FAIL

摘要

PURPOSE: A method for manufacturing a ferroelectric memory device is provided to prevent metalization fail by entirely removing contaminations generated in a contact hole connected to an upper electrode. CONSTITUTION: A semiconductor substrate(10) having a capacitor composed of a lower electrode(14), a ferroelectric film(16) and an upper electrode(17) of noble metal is prepared. An interlayer dielectric(18) is formed on the resultant structure. A contact hole is formed to expose the upper electrode. A titanium film is deposited on the contact hole and the interlayer dielectric. By etchback of the titanium film and the interlayer dielectric, a spacer(19A) is formed at inner walls of the contact hole and the surface of the upper electrode is entirely exposed. The spacer is removed and contaminations in the contact hole are simultaneously removed.