METHOD FOR FORMING METAL FILM OF SEMICONDUCTOR DEVICE WITH REDUCED METAL GRAIN SIZE

摘要

PURPOSE: A method for forming a metal film of a semiconductor device is provided to easily form a metal interconnection having circuit line-width of 100nm below by reducing the size of metal grain. CONSTITUTION: A wafer loading chuck(30) having a wafer(20) is loaded in a deposition chamber(10). A metal film(60) is formed on the wafer by depositing metal molecule of a target metal on the wafer using plasma. At the time, a cooling system(40) for reducing the temperature of the wafer is located at the lower of the wafer loading chuck, thereby reducing the size of metal grain.