| 摘要 |
FIELD: microelectronics; multicomponent integrated-circuit photodetectors such as video cameras and digital photography. ^ SUBSTANCE: proposed photodetector cell has first and second p-n junctions disposed at different depths from silicon substrate surface, and also additional area of same polarity of conductivity as substrate disposed in the latter at depth from working surface exceeding that of second p-n junction; this area forms potential barrier for minority charge carriers guaranteed in substrate area disposed deeper than barrier. ^ EFFECT: reduced noise level. ^ 6 cl, 7 dwg |
