| 摘要 |
PURPOSE: A nitride semiconductor light emitting device is provided to increase outside quantum efficiency by directly forming a surface lattice without an etch mask by a photoelectrochemical etch process. CONSTITUTION: A plurality of nitride semiconductor layers generate light by recombination by electrons and holes, including an n-type electrode that is electrically connected to an active layer containing gallium and nitrogen, an n-type AlxGayln1-x-yN(0<=x<=1, 0<=y<=1, x+y<=1) layer epitaxially grown before the growth of the active layer, and an n-type AlxGayln1-x-yN(0<=x<=1, 0<=y<=1, x+y<=1) layer. The n-type AlxGayln1-x-yN(0<=x<=1, 0<=y<=1, x+y<=1) layer has a surface exposed by etching to cut a device and form an n-type electrode. A surface lattice(54) is formed on the exposed surface except an n-type electrode region by a photoelectrochemical etch process.
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