| 摘要 |
PURPOSE: A transistor fabrication method is provided to improve productivity and reliability by securing a process margin and preventing a poly-pitting phenomenon in a nitride sidewall etch process. CONSTITUTION: A transistor fabrication method includes a dry-etch process for dry-etching a nitride sidewall, an ashing process, a cleaning process, a wet-etch process for wet-etching the nitride sidewall, and a patterning process for patterning a source and a drain. The dry-etch process includes a just etch process. The just etch process is characterized in that a predetermined insulating layer remains on an upper end part(30) of a gate poly.
|
