ACTIVE TERMINATION RESISTORS OF MEMORY SYSTEM AND ADJUSTING METHOD, ESPECIALLY CONTROLLING TO TURN ON/OFF TERMINATION RESISTOR REGARDLESS OF AN OPERATION MODE OF DRAM

摘要

PURPOSE: Active termination resistors of a memory system and an adjusting method thereof are provided to perform on/off control of the active termination resistors of DRAM regardless of an operation mode of DRAM mounted on a memory module. CONSTITUTION: Active termination resistors in a memory circuit for terminating the memory circuit comprises node; plural first termination resistors connected with a source voltage and the node in response to a corresponding control signal; plural second termination resistors connected with the source voltage and the node in response to a corresponding control signal. the adjusting method of the active termination resistors comprises the steps of: measuring one of the first termination resistors connected with the source voltage and the node in response to the corresponding control signal; adjusting the number of the first termination resistors connected with the node and the source voltage in response to the corresponding control signal by using the measured resistance.