METHOD OF MANUFACTURING MOS TRANSISTOR WITH RECESSED GATE TO SECURE RELATIVELY LARGE-SIZED CHANNEL COMPARED TO DESIGN RULE

摘要

PURPOSE: A method of manufacturing an MOS(Metal Oxide Semiconductor) transistor is provided to prevent the degradation of a threshold voltage by securing a relatively large-sized channel compared to a design rule using a recessed gate structure. CONSTITUTION: A plurality of isolation layers(12) are formed in a semiconductor substrate(10). The substrate is selectively etched as much as a predetermined thickness by using a photoresist pattern. The photoresist pattern is removed therefrom A gate insulating layer(22) and a gate electrode(24) are sequentially formed on the etched portion of the substrate.