METHOD OF MANUFACTURING GATE TO PREVENT ACTIVE ISOLATION PUNCH BY RESTRAINING ISOLATION PUNCH PATH

摘要

PURPOSE: A method of manufacturing a gate is provided to restrain an isolation punch path by forming the gate on a field oxide. CONSTITUTION: A field oxide(12) is formed in a silicon substrate(10) with a predetermined lower structure. A P+ region(14) is formed at both sides of the field oxide in the substrate. A gate(18) is formed on the field oxide. The accumulation of charges is induced to an interface between the field oxide and the substrate by applying positive bias to the gate, so that an isolation punch path is restrained.