ISOLATION METHOD OF SEMICONDUCTOR DEVICE USING IMPROVED NF3 HDP OXIDE LAYER IN SHALLOW TRENCH ISOLATION PROCESSING

摘要

PURPOSE: An isolation method of a semiconductor device is provided to effectively remove fluorine existing in an HDP(High Density Plasma) oxide layer by using an improved NF3 HDP oxide layer. CONSTITUTION: A trench is formed in a semiconductor substrate(20). A silicon-rich HDP oxide layer(25) is formed on the trench. First RTP(Rapid Thermal Processing) is performed under N2 or ammonia atmosphere. An NF3 HDP oxide layer(26) is partially filled in the trench. Second RTP is performed under O2 or N2O atmosphere. Then, an HDP oxide layer is entirely filled in the trench.