| 摘要 |
PURPOSE: A method is provided to analyze nanometer scale surface topology of a wafer by using only naked eyes instead of a bit of measurement equipment. CONSTITUTION: An oxide layer(20) with a thickness range of 5000 to 7000 angstrom is deposited on a wafer(10) with a non-uniform surface topology by using a CVD(Chemical Vapor Deposition). A planarization process is performed on the oxide layer by using CMP(Chemical Mechanical Polishing). At this time, the oxide layer is partially removed as much as a predetermined thickness range of 1000 to 3000 angstrom.
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