METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE CAPABLE OF IMPROVING CAPACITANCE USING SILICA FILM WITH MICRO PORE

摘要

PURPOSE: A method for manufacturing a semiconductor memory device is provided to improve capacitance by forming a lower electrode using a silica film having micro pore. CONSTITUTION: An interlayer dielectric(130) having a contact plug(140) is formed on a substrate(100). An etch stopper(150) is formed on the resultant structure. A silica film(160) with a plurality of micro pores(165) is formed on the etch stopper. A lower electrode region(170) is formed to expose the contact plug by etching the silica film and the etch stopper. A lower electrode is then formed on the lower electrode region.