SLURRY COMPOSITION FOR CMP OF COPPER COMPRISING POLISHING AGENT OF COLLOIDAL PARTICLE, OXIDANT, COMPLEXING AGENT, ANTIOXIDANT, AMINE-BASED PH CONTROLLER AND WATER, AND CMP METHOD USING THE COMPOSITION

摘要

PURPOSE: A slurry composition for chemical mechanical polishing of copper and a method for chemical mechanical polishing a semiconductor device containing a copper film and a tantalum-containing compound film by using the composition are provided, to improve the polishing property to a copper film, the selectivity of copper to oxide and tantalum nitride and the dispersibility of slurry and to reduce erosion. CONSTITUTION: The slurry composition comprises 0.5-20 wt% of a polishing agent of colloidal particle; 0.05-20 wt% of an oxidant; 0.1-5 wt% of a complexing agent; 0.001-1.0 wt% of an antioxidant; an amine-based pH controller; and the balance of water. Preferably the polishing agent is a colloidal particle selected from the group consisting of colloidal silica, alumina, ceria and titania; the complexing agent comprises at least one carboxylic acid amine; the pH controller is selected from an alkanol amine and an alkane amine; the oxidant is hydrogen peroxide; and the antioxidant is selected from a triazole.