METHOD FOR FORMING LINE SPACER OF SEMICONDUCTOR DEVICE TO FORM NITRIDE LAYER OF DIFFERENT THICKNESS IN CELL REGION AND CELL PERIPHERAL REGION

摘要

PURPOSE: A method for forming a line spacer of a semiconductor device is provided to form a nitride layer of different thickness in a cell region and a cell peripheral region by adjusting a gas ratio of SiH4 and NH3 of a nitride layer formed in a single chamber by an LPCVD(low pressure chemical vapor deposition) method. CONSTITUTION: A wordline(45) is formed on a semiconductor substrate(41) that is separated into a cell region and a cell peripheral region. A buffer oxide layer(47) is formed on the resultant structure including the wordline. A spacer nitride layer is formed on the buffer oxide layer in a manner that the cell region and the cell peripheral region have different thick nesses. The spacer nitride layer and the buffer oxide layer positioned in the cell peripheral region are selectively eliminated to form the first spacer(51) on the sidewall of the wordline. The spacer nitride layer and the buffer oxide layer positioned in the cell region are selectively removed to form the second spacer(53) on the sidewall of the wordline.