ELECTRON BEAM HARDENING APPARATUS USING SWP PLASMA SOURCE TO PREVENT LINE STRIATION PHENOMENON CAUSED BY USING DUV PHOTORESIST AND DECREASE OF PHOTORESIST SELECTIVITY

摘要

PURPOSE: An electron beam hardening apparatus using an SWP plasma source is provided to avoid a line striation phenomenon caused by using DUV(deep ultraviolet) photoresist and a decrease of photoresist selectivity by varying an electronic source of a conventional electron beam hardening apparatus. CONSTITUTION: A wafer is installed in a reaction chamber part(31). A plasma generation chamber part(35) is connected to an outside high voltage power part, fixedly coupled to the upper surface of the reaction chamber part by an insulator(37). A microwave supply part is formed on the plasma generation chamber part. A non-metallic grid(39) is installed between the reaction chamber part and the plasma generation chamber part. A magnetic coil part(47) is wound around the outer circumferential surface of the reaction chamber part.