METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE YIELD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve yield of a semiconductor device by preventing an APL(advanced planarization) layer from being attacked by a cleaning process using BOE(buffered oxide etchant). CONSTITUTION: A plurality of conductive patterns that are adjacent to each other are formed on a substrate(20). An insulation layer(26) is formed on the front surface of the substrate by using an APL layer or an SOG(spin on glass) layer. The insulation layer is selectively etched to form a contact hole(28) exposing the substrate between the conductive patterns. Etch residue is eliminated by using a cleaning solution including H2O2 and H2SO4. An attack preventing layer(29) is formed to surround the sidewall of the insulation layer. A cleaning process is performed by using a BOE cleaning solution.