METHOD FOR FABRICATING EXPOSURE MASK FOR PHOTOLITHOGRAPHY WITH SILYLATION LAYER

摘要

PURPOSE: A method for fabricating an exposure mask for a photolithography is provided to obtain easily a micro pattern by silylation processing. CONSTITUTION: A shielding layer(12) and a resist layer(14) are sequentially formed on a transparent substrate(10). An exposure region is formed by exposing selectively the resist layer. A silylation layer(18) is formed in the region of exposure by silylation processing at the region of exposure. The shielding layer is patterned by using a resist pattern as an etching mask. The resist layer pattern is removed from the shielding layer pattern.