发明名称 |
TFT PANEL AND A MANUFACTURING METHOD THEREOF CAPABLE OF IMPROVING A LIGHT TRANSMISSION RATIO |
摘要 |
PURPOSE: A TFT(Thin Film Transistor) panel and a manufacturing method thereof are provided to improve a light transmission ratio and to reduce a parasite capacitance between a pixel electrode and a signal line. CONSTITUTION: A gate line(121) is formed on an insulation substrate. A gate insulation film is formed on the gate line. A semiconductor layer is formed on the gate insulation film. A data line(171) and a drain electrode(175) are formed on the semiconductor layer. A passivation film is formed on the data line and the drain electrode. A color filter is formed on the passivation film. An organic film is formed on the color filter and a pixel electrode(190) is formed on the organic film and connected with the drain electrode. The organic film includes the first portion positioned on the data line and the remaining second portion. The thickness of the second portion is thicker than that of the first portion.
|
申请公布号 |
KR20050001708(A) |
申请公布日期 |
2005.01.07 |
申请号 |
KR20030041988 |
申请日期 |
2003.06.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JAE HO;CHUNG, CHAE WOO;KIM, JANG SOO;KIM, SHI YUL |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|