METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO IMPROVE CONTACT CHARACTERISTIC AND EMBODY PROCESS SIMPLIFICATION AND COST REDUCTION

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve a contact characteristic and embody process simplification and cost reduction by sufficiently guaranteeing a contact area between a storage node contact plug and a lower electrode. CONSTITUTION: A semiconductor substrate(40) is prepared which has a storage node contact plug(45) isolated by an interlayer dielectric. An insulation layer for forming a lower electrode is deposited on the substrate. A circular hole for the lower electrode is formed to expose a part of the storage node contact plug. The contact plug exposed to the inside of the hole is partially eliminated. A material layer for the lower electrode is deposited to fill a portion from which the contact plug is removed.