发明名称 COMPOSITION FOR FORMATION OF FERROELECTRIC THIN FILM COMPRISING METAL COMPOUND AND SPECIFIC HYDROPHOBIC COMPOUND HAVING REACTIVE GROUP, FERROELECTRIC THIN FILM USING THE COMPOSITION AND ITS PREPARATION METHOD
摘要 PURPOSE: A composition for formation of a ferroelectric thin film, a ferroelectric thin film using the composition and its preparation method are provided, to prevent the generation of striation and to widen the selection width of a sol composition. CONSTITUTION: The composition comprises a metal compound; a hydrophobic compound having a reactive group reacting with a hydroxyl group and whose at least terminal part of residue except the reactive group is hydrophobic; and optionally diethanolamine as a hydrolysis inhibitor of a metal compound, polyethylene glycol as a stabilizer of a metal compound and/or 2-butoxyethanol as a solvent. Preferably the reactive group is at least one selected from the group consisting of a carboxyl group, a halogenated silane group, a hydroxysilane group and an alkoxysilane group.
申请公布号 KR20050002629(A) 申请公布日期 2005.01.07
申请号 KR20040049678 申请日期 2004.06.29
申请人 SEIKO EPSON CORPORATION 发明人 SUMI, KOJI
分类号 C04B35/622;B41J2/16;C01G25/00;C01G99/00;C23C18/12;H01B3/10;H01B3/20;H01L41/09;H01L41/18;H01L41/187;H01L41/22;H01L41/318;H01L41/39 主分类号 C04B35/622
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