METHOD OF FORMING DAMASCENE PATTERN OF SEMICONDUCTOR DEVICE USING OUT PHASE PULSE MODULATION AND SOURCE PULSE MODULATION FOR PREVENTING MICRO-TRENCH FROM BEING GENERATED AT BOTTOM CORNER OF PATTERN

摘要

PURPOSE: A method of forming a damascene pattern of a semiconductor device is provided to prevent a micro-trench from being generated at a bottom corner of the pattern by using an outer phase pulse modulation and a source pulse modulation. CONSTITUTION: An oxide layer(23b), a first photoresist pattern(25) with a first opening and a second photoresist pattern with a second opening are sequentially formed on a semiconductor substrate(21). The second opening is larger than the first opening. A first trench is formed by patterning firstly the oxide layer using an outer phase pulse modulation. The second photoresist pattern is removed therefrom. A second trench(29a) is formed by patterning secondly the oxide layer using a source pulse modulation.