METHOD OF FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE USING MIXED GASES OF CBr4 AND O2 FOR PREVENTING SURFACE DAMAGE AND HYDROCARBON POLYMER

摘要

PURPOSE: A method is provided to form a fine pattern of a semiconductor device without surface damage and hydrocarbon polymer by using mixed gases of CBr4 and O2. CONSTITUTION: An InP thin film(33) and a photoresist pattern(35) are formed on a lower layer(31). The InP thin film is etched by using the photoresist pattern as an etching mask under CBr4 and O2 gases atmosphere in ECR-RIBE(Electron Cyclotron Resonance-Reactive Ion Beam Etching) equipment. The CBr4 is used for an etching process and the O2 gas is used for an ashing process.