METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING PROTECTION LAYER FOR PREVENTING DAMAGE OF GATE OXIDE LAYER AND RESTRAINING INVERSE NARROW WIDTH EFFECT

摘要

PURPOSE: A method of forming an isolation layer of a semiconductor device is provided to prevent the damage of a gate oxide layer due to plasma and to restrain INWE(Inverse Narrow Width Effect) by using a protection layer for protecting a trench and the gate oxide layer. CONSTITUTION: A semiconductor structure layer with a gate oxide layer(12) is formed on a semiconductor substrate(10). A trench is formed in the resultant structure by etching sequentially the semiconductor structure layer and the substrate. A protection layer(22) is formed along the upper surface of the resultant structure. An HDP(High Density Plasma) oxide layer for filling completely the trench is formed thereon.