发明名称 FERROELECTRIC CAPACITOR WITH LOWER ELECTRODE FOR PREVENTING BARRIER METAL FROM BEING OXIDIZED AND FABRICATING METHOD THEREOF TO PREVENT LOWER ELECTRODE FROM BEING LIFTED
摘要 PURPOSE: A ferroelectric capacitor with a lower electrode for preventing a barrier metal from being oxidized is provided to prevent a lower electrode from being lifted by forming a lower electrode of a concave type on a recessed plug. CONSTITUTION: A semiconductor substrate(21) is prepared. An interlayer dielectric having a hole exposing the surface of the semiconductor substrate is formed on the semiconductor substrate. A recessed plug is filled in the groove of the interlayer dielectric. A barrier metal and a lower electrode(27a) are stacked on the plug and the interlayer dielectric, having a concave part inserted into the recessed part of the plug. A ferroelectric layer(29) and an upper electrode(30) are stacked on the lower electrode.
申请公布号 KR20050002028(A) 申请公布日期 2005.01.07
申请号 KR20030043074 申请日期 2003.06.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, EUN SEOK
分类号 H01L27/105;(IPC1-7):H01L27/105 主分类号 H01L27/105
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