摘要 |
PURPOSE: A ferroelectric capacitor with a lower electrode for preventing a barrier metal from being oxidized is provided to prevent a lower electrode from being lifted by forming a lower electrode of a concave type on a recessed plug. CONSTITUTION: A semiconductor substrate(21) is prepared. An interlayer dielectric having a hole exposing the surface of the semiconductor substrate is formed on the semiconductor substrate. A recessed plug is filled in the groove of the interlayer dielectric. A barrier metal and a lower electrode(27a) are stacked on the plug and the interlayer dielectric, having a concave part inserted into the recessed part of the plug. A ferroelectric layer(29) and an upper electrode(30) are stacked on the lower electrode.
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