发明名称 METHOD FOR ETCHING MASK LAYER OF PHOTOMASK TO PREVENT PARTICLES AND BRIDGE GENERATED IN PHOTOMASK
摘要 PURPOSE: A method for etching a mask layer of a photomask is provided to prevent particles and a bridge generated in the photomask by supplying purge gas to a reaction chamber after the first etch process is performed and by eliminating the particles without performing the second etch process. CONSTITUTION: A mask layer is formed on the front surface of a light transmission substrate(100). A resist pattern is formed on the mask layer to define a light transmission region and a light mask region. The mask layer is firstly dry-etched and patterned according to the resist pattern. Purge gas is supplied to a reaction chamber for performing a fabrication process of a photomask so as to eliminate particles. The mask layer is secondly dry-etched and patterned according to the resist pattern.
申请公布号 KR20050001838(A) 申请公布日期 2005.01.07
申请号 KR20030042179 申请日期 2003.06.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, HO YONG
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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