发明名称 |
METHOD FOR ETCHING MASK LAYER OF PHOTOMASK TO PREVENT PARTICLES AND BRIDGE GENERATED IN PHOTOMASK |
摘要 |
PURPOSE: A method for etching a mask layer of a photomask is provided to prevent particles and a bridge generated in the photomask by supplying purge gas to a reaction chamber after the first etch process is performed and by eliminating the particles without performing the second etch process. CONSTITUTION: A mask layer is formed on the front surface of a light transmission substrate(100). A resist pattern is formed on the mask layer to define a light transmission region and a light mask region. The mask layer is firstly dry-etched and patterned according to the resist pattern. Purge gas is supplied to a reaction chamber for performing a fabrication process of a photomask so as to eliminate particles. The mask layer is secondly dry-etched and patterned according to the resist pattern.
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申请公布号 |
KR20050001838(A) |
申请公布日期 |
2005.01.07 |
申请号 |
KR20030042179 |
申请日期 |
2003.06.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JUNG, HO YONG |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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