| 摘要 |
PURPOSE: A method of manufacturing a bottom gate type TFT(Thin Film Transistor) device is provided to form a semiconductor layer made of an amorphous silicon layer without an additional photolithographic process by crystallizing selectively an amorphous silicon layer and performing etching thereon using the difference of etching rate between a crystallized silicon portion and an amorphous silicon portion. CONSTITUTION: A gate electrode, a gate insulating layer(116) and an amorphous silicon layer are sequentially formed on a substrate(110). A first region is defined in the amorphous silicon layer and a polysilicon layer(119) is formed by crystallizing selectively a surface of the first region. Etching is performed thereon by using the difference of etching rate between the polysilicon layer and the amorphous silicon layer until the polysilicon layer is completely removed therefrom, so that a stepped portion is formed between the amorphous silicon layer of the first region and the other amorphous silicon layer. A semiconductor layer made of the amorphous silicon layer of the first region is completed by performing over-etching on the resultant structure.
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