METHOD FOR FORMING SEMICONDUCTOR DEVICE TO MAKE GOOD PROFILE OF CHANNEL TRENCH

摘要

PURPOSE: A method for forming a semiconductor device is provided to make a good profile of a channel trench by eliminating the remaining silicon substrate between the channel trench and an isolation trench structure. CONSTITUTION: An isolation trench structure(240) is formed on a semiconductor substrate(200). A channel trench(270) is formed between the isolation trench structures. The silicon substrate remaining between the channel trench and the isolation trench structure is oxidized. The oxide layer is eliminated. The oxide layer is formed at a temperature from 800-900 deg.C in an oxygen reactor.