METHOD OF FORMING SEMICONDUCTOR DEVICE TO IMPROVE GAP-FILL PROPERTIES AND PREVENT CRACKS

摘要

PURPOSE: A method of forming a semiconductor device is provided to improve gap-fill properties and to prevent cracks by forming a protecting layer composed of a silicon nitride layer and an SILK(SIlicon Low K) layer on a semiconductor substrate. CONSTITUTION: A first protecting layer made of a silicon nitride layer is formed on the entire surface of a semiconductor substrate(21) including metal lines(23). A SILK layer is coated thereon. A second protecting layer(31) is formed by curing the SILK layer. A third protecting layer(33) is formed on the second protecting layer. The curing process is performed at the temperature of 430 to 470 for 25 to 35 minutes under an N2/H2 gas atmosphere.