METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE USING ETCHING MASK MADE OF POLYVINYL ALCOHOL TO SIMPLIFY MANUFACTURING PROCESSES AND REDUCE FABRICATION COST

摘要

PURPOSE: A method of manufacturing a capacitor of a semiconductor memory device is provided to simplify manufacturing processes and to reduce fabrication costs by performing an etch back process on an amorphous polysilicon layer using a mask made of polyvinyl alcohol. CONSTITUTION: An interlayer dielectric(3) with a plurality of openings is formed on a substrate. An amorphous polysilicon layer(4) for a lower electrode is deposited thereon. A polyvinyl alcohol layer(5) is formed on the amorphous polysilicon layer. The polyvinyl alcohol layer is selectively dissolved by using deionized water. At this time, the amorphous polysilicon layer is partially exposed to the outside. The exposed amorphous polysilicon layer is etched back by using the dissolved polyvinyl alcohol layer as an etching mask.