METHOD OF FORMING SEMICONDUCTOR DEVICE FOR IMPROVING GATE INDUCED DRAIN LEAKAGE AND REFRESH PROPERTIES

摘要

PURPOSE: A method of forming a semiconductor device is provided to improve GIDL(Gate Induced Drain Leakage) and refresh properties in a data read process by controlling properly the thickness of a spacer according to its position. CONSTITUTION: A plurality of gate electrodes are formed on a semiconductor substrate(11). A first insulating spacer is formed at both sidewalls of each gate electrode on a source junction region(28a). A second insulating spacer is formed at both sidewalls of each gate electrode on a drain junction region(28b). The thickness of the first insulating spacer is thinner than that of the second insulating spacer.