NON-VOLATILE MEMORY DEVICE WITH DUAL GATE STRUCTURE AND FORMING METHOD THEREOF TO IMPROVE DATA RETENTION CHARACTERISTIC

摘要

PURPOSE: A non-volatile memory device with a dual gate structure is provided to improve a data retention characteristic by making the electrons stored in a floating gate isolated in a lowest energy band. CONSTITUTION: An isolation layer is formed on a semiconductor substrate(90) to define an active region. A data line(135a) is formed over the active region. A multilayer pattern(115) is composed of a floating gate(105a), an insulation pattern and a conductive pattern(109a), disposed between the data line and the active region. A vertical channel pattern(121a') is disposed on the sidewall of the multilayer pattern. A tunnel barrier pattern is interposed between the floating gate and the vertical channel pattern and between the conductive pattern and the vertical channel pattern. At least the vertical channel pattern is surrounded by a control gate line(125a') orthogonal to the data line.