METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ANNEALING ON SEMICONDUCTOR SUBSTRATE WITH LARGE AND SMALL MASS IONS

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to restrain TED(Transient Enhanced Diffusion), to increase the activation ratio of implanted ions and to prevent the damage of a semiconductor substrate by performing annealing after mixing large mass ions with small mass ions. CONSTITUTION: A tunnel oxide layer(16), a floating gate electrode(18), a dielectric film(20) and a control gate electrode(22) are sequentially formed on a semiconductor substrate(10). A first ion-implantation of large mass ions is performed on the resultant structure by using the control gate electrode as a mask. A source and drain region(26) are formed in the substrate by performing a second ion-implantation on the resultant structure using small mass ions. Annealing is performed thereon.