CAPACITOR FOR SEMICONDUCTOR DEVICE PREVENTING BRIDGE USING SPACER AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A capacitor for a semiconductor device and a method of manufacturing the same are provided to prevent bridge due to leaning and collapse of a storage node electrode by forming a spacer at the top sidewalls of the storage node electrode. CONSTITUTION: An etch stop layer(36), an oxide layer and a polysilicon layer are sequentially formed on a semiconductor substrate(30) with a conductive structure(34). A trench is formed by etching the polysilicon layer and the oxide layer. A ring-shaped spacer(52) is formed at the inner wall of the oxide layer. An opening portion(42) is formed by etching sequentially the oxide film and the etch stop layer. After forming a conductive layer on the substrate, a storage node electrode(44) is formed by removing the conductive layer. A dielectric film and a plate electrode are formed on the storage node electrode.