发明名称 |
METHOD FOR FORMING SELECTIVE SILICON OXIDE LAYER IN PRESENCE OF TUNGSTEN AND SILICON DURING FABRICATION OF SEMICONDUCTOR DEVICE BY PERFORMING SELECTIVE OXIDATION PROCESSING AFTER DOPING HYDROGEN IN TUNGSTEN GATE ELECTRODE |
摘要 |
PURPOSE: A method for forming a selective silicon oxide layer in the presence of tungsten and silicon during the fabrication of a semiconductor device is provided to restrain abnormal oxidation of tungsten by performing selective silicon oxidation processing after doping hydrogen in a tungsten gate electrode. CONSTITUTION: A gate insulating layer(31) is formed on a silicon substrate(30). A tungsten gate layer(32) is formed on the gate insulating layer. Hydrogen is doped in the tungsten gate layer. A gate electrode is formed by patterning the tungsten gate layer. Then, a selective silicon oxide layer is formed on the silicon substrate by performing oxidation processing.
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申请公布号 |
KR20050002042(A) |
申请公布日期 |
2005.01.07 |
申请号 |
KR20030043088 |
申请日期 |
2003.06.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
JANG, SE AUG;LIM, KWAN YONG;OH, JAE GEUN;YANG, HONG SEON |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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