| 摘要 |
PURPOSE: A crystal defect test method of a semiconductor device is provided to rapidly and exactly inspect COP(Crystal Oriented Pit) by using HDP(High Density Plasma)-CVD(Chemical Vapor Deposition). CONSTITUTION: A wafer(10) has initial defect, such as COP defect(20A). By cleaning the wafer(10) having COP defects, the crystal defects are enlarged to COP defect(20B). The enlarged crystal defects are further expanded to the transverse direction by HDP-CVD, thereby forming COP defect(20C). Then, the crystal defects are inspected by a desired inspection equipment.
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